Effect of ytterbium inclusion in hafnium oxide on the structural and electrical properties of the high-k gate dielectric
gate dielectric、electrical properties、dielectric constant、thin films、sputtering method、rare earth ions、leakage current、single crystal、cubic phase
TB3;TQ1
the National 111 ProjectB08040;National Natural Science Foundation of China51172186,61376091;the Natural Science Foundation of Shaanxi province2012JM6012
2014-06-19(万方平台首次上网日期,不代表论文的发表时间)
共5页
580-584