Effects of NH3 annealing on interface and electrical properties of Gd-doped HfO2/Si stack
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National Natural Science Foundation of China50932001;National Science and Technology Major Project2009ZX02039-005;National Natural Science Foundation of China51102020,51202013
2013-06-13(万方平台首次上网日期,不代表论文的发表时间)
共5页
395-399