Defects in Fast-Neutron Irradiated Nitrogen-Doped Czochralski Silicon after Annealing at High Temperature
24
O4(物理学)
国家自然科学基金50472034;河北省自然科学基金E2005000048;Education Ministry Doctoral Program Foundation of China20050080006
2008-01-07(万方平台首次上网日期,不代表论文的发表时间)
共3页
91-93