In-Situ Observation of SiC Bulk Single Crystal Growth by XRD System

机标关键词：crystal growth rate、rocking curve、single crystal growth、growth condition、the optimum

所属期刊栏目：24

分类号：O7(晶体学)

资助基金：METI NSS Program Ultra-Low Loss Power Device Technology;The high-resolution X-ray topography was performed at BL20B2 in the SPring-8 with the approval of the Japan Synchrotron Radiation Research Institute2005A0403-ND3c-np

在线出版日期：2008-01-07（万方平台首次上网日期，不代表论文的发表时间）

页数：共5页

页码：49-53