Growth and Characterization of Semi-Insulating GaN Films Grown by MOCVD
surface morphology、thermally stimulated current、scanning electron microscopy、full width at half maximum、chemical vapor deposition、atomic force microscopy、room temperature、Hall measurement、rocking curve、GaN films
24
TN3(半导体技术)
国家重点基础研究发展计划973计划G20000683;2002CB311903;国家自然科学基金60136020;Key Innovation Program of Chinese Academy of Science2002AA305304;国家高技术研究发展计划863计划2002AA305304
2008-01-07(万方平台首次上网日期,不代表论文的发表时间)
共5页
14-18