Properties of Ultra-Thin Hafnium Oxide and Interfacial Layer Deposited by Atomic Layer Deposition
Atomic Layer Deposition、atomic layer deposition、interfacial layer、high temperature、interface layer、gate dielectric、silicon oxide、Si substrate
22
TG175(金属学与热处理)
2005-09-08(万方平台首次上网日期,不代表论文的发表时间)
共5页
21-25