Surface plasmon enhanced solar-blind photoresponse of Ga2O3 film with Ga nanospheres
Semiconductor solar-blind (220-280nm) photodetectors (PDs),which have important applications both in civil and military aspects,are mainly based on diamond ”1”,A1GaN ”2”,MgZnO ”3”,and Ga2O3 ”4-11”.Among these materials,Ga2O3 has a direct band gap (～4.9 eV) just falling in solarblind spectral range,which makes Ga2O3 a desirable candidate for solar-blind photodetection.Up to now,many kinds of Ga2O3 PDs have been demonstrated including bulk ”4,5”,film ”6-8” and nanostructures ”9-11”,as summarized in Table 1.
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the National Natural Science Foundation of China Grants Nos.11674405,11675280,51272280,11274366,11474337,and 61306011.The authors acknowledge support from the Laboratory of Microfabrication in Institute of Physics,Chinese Academy of Sciences
2018-10-23（万方平台首次上网日期，不代表论文的发表时间）
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