Investigation of gate-all-around silicon nanowire transistors for ultimately scaled CMOS technology from top-down approach
approach、top-down、CMOS technology、scaled、silicon nanowire、SOI devices、carrier transport、structure、physical characteristics、temperature dependence、performance in、integration、threshold voltage、room temperature、based、work function、heat transfer、conventional、new process、MOS devices
05
O4(物理学)
the National Natural Science Foundation of China60625403;90207004;Special Funds for Major State Basic Research 973Projects of China2006CB302701;the National Science & Technology Major Project2009ZX02035-001
2011-04-07(万方平台首次上网日期,不代表论文的发表时间)
414-421