10.11989/JEST.1674-862X.70718075
Resistive Switching Characteristics of Al2O3/ZnO Bilayer Thin Films for Flexible Memory Applications
15
the National Key Research and Development Program of China under Grant No.2016YFB0700201 and the National Natural Science Foundation of China under Grant No.51372030
2018-03-09(万方平台首次上网日期,不代表论文的发表时间)
共5页
364-368