10.3969/j.issn.1674-862X.2014.04.014
Intrinsic Limits of Electron Mobility in Modulation-Doped AlGaN/GaN 2D Electron Gas by Phonon Scattering
material properties、numerical results、room temperature
TG4;P5
This work was supported in part by the Grainger Center for Electric Machinery and Electromechanics of the University of Illinois
2015-01-13(万方平台首次上网日期,不代表论文的发表时间)
共4页
415-418