Revealing layer-dependent interlayer interactions by doping effect on graphene in WSe2/N-layer graphene heterostructures using Raman and photoluminescence spectroscopy
Assembling layered materials in the form of vertically stacked heterostructures has enabled the combination of various properties from different two-dimensional(2D)materials,which is receiving a great deal of attention for investigating novel physical phenomena and emerging a facile way to fabricate promising highly tailored architec-tures.In this study,we employ Raman and photolumines-cence(PL)spectroscopy to systematically investigate the influence of thickness on interlayer interaction in WSe2/n-layer graphene(WSe2/nL-Gr,n=1,2,3,4)heterostruc-tures.It is found that the charge carrier concentration of graphene can be significantly affected by distinct interlayer coupling originated from heterostructure interface.
graphene、raman、doping、effect、heterostructure、interactions、interlayer、layer-dependent、luminescence、n-layer
41
O4;O641.12;O552.6
2023-01-12(万方平台首次上网日期,不代表论文的发表时间)
共8页
3646-3653