Structure and properties of indium-doped ZnO films prepared by RF magnetron sputtering under different pressures
different、structure、films、indium-doped、magnetron、prepared、pressures、properties、sputtering、under
41
S;R445.1;O
2022-10-21(万方平台首次上网日期,不代表论文的发表时间)
共5页
3239-3243