Inhomogeneous strain and doping of transferred CVD-grown graphene

摘要：

Chemical vapor deposition(CVD)-grown graphene on copper foils is subject to the Cu substrate,which affects the spatial distribution of strain and doping,thus influencing the electronic properties of graphene.However,plenty of electronic devices based on CVD-grown graphene require transfer process and the distribution of doping and strain in CVD-grown graphene transferred onto the insulating sub-strates remains elusive.In this work,we focus on the graphene islands grown on polycrystalline copper foil and transferred to SiO2/Si substrate.We find that the distribu-tion of doping and strain in transferred graphene islands grown on polycrystalline copper foil are spatially inho-mogeneous.

机标关键词：graphene、strain、cvd-grown、doping、inhomogeneous、transferred

所属期刊栏目：41

分类号：O4;X172;O552.6

在线出版日期：2022-07-11（万方平台首次上网日期，不代表论文的发表时间）

页数：共8页

页码：1727-1734