X-ray irradiation-induced degradation in Hf0.5Zr0.5O2 fully depleted silicon-on-insulator n-type metal oxide semiconductor field-effect transistors
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This work was financially supported by the National Natural Science Foundation of China;the National Major Project of Science and Technology of China;the Youth Innovation Promotion Association,CAS;and the Opening Project of Key Laboratory of Microelectronic Devices&Integrated Technology,Institute of Microelectronics,CAS
2021-12-07(万方平台首次上网日期,不代表论文的发表时间)
共9页
3299-3307