Low-temperature growth of stoichiometric aluminum nitride films prepared by magnetic-filtered cathodic arc ion plating
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This study was financially supported by the National Natural Science Foundation of China Nos.51071070 and 51271079,the Program for New Century Excellent Talents in University No.NCET-11-0156 and the Fundamental Research Funds for the Central Universities,South China University of Technology No.2012ZZ0015.
2016-08-26(万方平台首次上网日期,不代表论文的发表时间)
520-525