Oxidation-based wet-etching method for AlGaN/GaN structure with different oxidation times and temperatures
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This work was financially supported by the National Natural Science Foundation of China Nos.60406004,60890193,and 60736033,and the National Key Micrometer/Nanometer Processing Laboratory.
2015-03-24(万方平台首次上网日期,不代表论文的发表时间)
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