Improved resistive switching stability of Pt/ZnO/CoOx/ZnO/Pt structure for nonvolatile memory devices
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This study was financially supported by the National Natural Science Foundation of China.51231004 and 51202125;the National Basic Research Program of China2010CB832905
2014-03-06(万方平台首次上网日期,不代表论文的发表时间)
共6页
544-549