Deposition and properties of highly c-oriented of InN films on sapphire substrates with ECR-plasma-enhanced MOCVD
MOCVD
31
the National Natural Science Foundation of China61040058;60976006;the Fundamental Research Funds for the Central UniversitiesDUT10LK01;the Science and Technology Foundation for Higher Education of Liaoning Province, China and Science and Technology Innovation Project Foundation for Higher Education School707015
2012-07-03(万方平台首次上网日期,不代表论文的发表时间)
共4页
150-153