Crystal Perfection in GaP Films Heteroepitaxially Grown on GaAs by Low-pressure Metalorganic Chemical Vapor Deposition
Raman scattering、chemical vapor deposition、growth temperature、epitaxial layers、residual stress
19
TG14(金属学与热处理)
2004-02-20(万方平台首次上网日期,不代表论文的发表时间)
共4页
87-90