Analog ferroelectric domain-wall memories and synaptic devices integrated with Si substrates
integrated、devices、with、analog、domain-wall、ferroelectric、memories、substrates、synaptic
15
F830.9;P744.4;F144.5
2022-05-11(万方平台首次上网日期,不代表论文的发表时间)
共8页
3606-3613