Gate-tunable linear magnetoresistance in molybdenum disulfide field-effect transistors with graphene insertion layer
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This work was supported by the National Key Research and Development Program of China ;the National Natural Science Foundation of China ;as well as the Strategic Priority Research Program of Chinese Academy of Sciences
2021-07-27(万方平台首次上网日期,不代表论文的发表时间)
共5页
1814-1818