MoS2 dual-gate transistors with electrostatically doped contacts
12
the National Key Research and Development Program of China.2016YFA0203900 and 2018YFA0306101;Shanghai Municipal Science and Technology Commission18JC1410300;Natural Science Foundation of China61874154
2019-12-04(万方平台首次上网日期,不代表论文的发表时间)
共5页
2515-2519