Trap and 1/f-noise effects at the surface and core of GaN nanowire gate-all-around FET structure
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the Basic Science Research Program through the NRF funded by Ministry of Education.2013R1A6A3A04057719 and NRF-2018R1A6A1A03025761;was also funded by the Ministry of Science,ICT and Fusion Research2018R1D1A1B07040603;BK21 Plus funded by the Ministry of Education21A20131600011
2019-05-27(万方平台首次上网日期,不代表论文的发表时间)
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809-814