Measurement of residual stress in a multi-layer semiconductor heterostructure by micro-Raman spectroscopy
residual stress、electron microscopy、geometric parameters、surface energy、used in
32
TE9;TS1
Acknowledgments The project was supported by the National Basic Research Program of ChinaGrant 2012CB937500;the National Natural Science Foundation of ChinaGrants 11422219,11227202,11372217,11272232;the Program for New Century Excellent Tal-ents in UniversityGrant NCET-13;China Scholarship Council201308120092
2016-11-07(万方平台首次上网日期,不代表论文的发表时间)
共8页
805-812