Annealing behavior of ultrathin Mo layer located at interface or on surface of Ti-Si system
Si substrate、backscattering spectrometry、electron microscopy、energy dispersive
12
TN304.1+2;TN304.2+6;TN305.3;O485(半导体技术)
国家自然科学基金19910131370
2004-01-08(万方平台首次上网日期,不代表论文的发表时间)
共7页
183-189