前沿配线接触方式
@@ 1 IntroductionTokyo Electron Limited has already released CVD Ti/TiN system for contact and capacitor electrode application. This system has been selected among many DRAM customers due to its excellent filling performance. In future generation, low temperature process (<450℃) would be needed under the requirement of capacitor dielectric material change by DRAM cell size shrink, and to extend for logic and e-DRAM application (Figure 1). In this paper, CVD Ti/TiN system and current status of low temperature process development are presented.
前沿、配线、low temperature、current status、cell size
33
TN305.95(半导体技术)
2005-01-20(万方平台首次上网日期,不代表论文的发表时间)
共2页
41-42